X‐ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures
X‐ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures
复制标题
非极性GaInN/GaN多量子阱结构的X射线成分分析
DOI：
10.1002/pssb.201046335
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
A. Hangleiter
中科院分区：
文献类型：
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作者：
H. Bremers;A. Schwiegel;L. Hoffmann;H. Jönen;U. Rossow;J. Thalmair;J. Zweck;A. Hangleiter
确定多量子阱结构中的组分是一个关键问题。到目前为止，仅发表了很少的通过X射线衍射测定III族氮化物非极性m-或a-方向浓度的实验描述。以GaInN/GaN多量子阱结构为例，我们提出了不同的方法来确定铟浓度。在给出了相应的弹性关系后，我们采用了Segmüller和Blakeslee提出的非极性方向的阶跃模型。该模型允许模拟对称的2 {\theta} {-} {\omega} $扫描。我们将讨论这种模式的可能性和局限性。此外，我们提出了一种方法来确定浓度通过使用的零级超晶格峰的峰位置。最后，我们比较了使用在m-平面SiC和体m-平面GaN上生长的样品的方法。
Determination of compositions in multiple quantum well structures is a critical issue. Until now only few experimental description of determination of concentrations in the nonpolar m‐ or a‐direction in III‐nitrides by means of X‐ray diffraction has been published. Using the example of GaInN/GaN multiple quantum well structures we present different methods to determine the indium concentration. After presenting the relevant elasticity relations we adopt a step model introduced by Segmüller and Blakeslee to nonpolar directions. This model allows a simulation of symmetrical $2{\theta} {-} {\omega} $ scans. We will discuss the possibilities and also the limitations of this model. Additionally, we present a method to determine concentrations by using the peak position of the zero order superlattice peak. Finally, we compare the methods using samples grown on m‐plane SiC and bulk m‐plane GaN.