Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate
Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate
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发表时间：
2011-11
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通讯作者：
Y. Zhan;Zheng Liu;S. Najmaei;P. Ajayan;J. Lou
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作者：
Y. Zhan;Zheng Liu;S. Najmaei;P. Ajayan;J. Lou
单层二硫化钼(MoS2)是一种具有直接带隙的二维晶体，是一种很有前途的补充石墨烯的二维纳米电子器件。最近有人尝试通过化学和机械剥离块状材料来制备MoS2层。在这里，我们展示了用可扩展化学气相沉积(CVD)方法在SiO_2衬底上大面积生长MoS_2原子层。所制备的样品既可以很容易地用于进一步的器件制造，也可以很容易地从二氧化硅中释放出来并转移到任意衬底上。对生长的MoS_2薄膜进行高分辨电子显微镜和拉曼光谱分析表明，薄膜的层数从单层到几层不等。我们关于在介质上直接生长MoS_2层的结果显示了在石墨烯之后的有用的2D原子层的扩展集，这些原子层可以被可控地合成和操纵以用于许多应用。
Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and mechanical exfoliation of bulk material. Here we demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from SiO2 and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.