Phase Equilibria in the System Boron Carbide‐Silicon Carbide
Phase Equilibria in the System Boron Carbide‐Silicon Carbide
复制标题
碳化硼-碳化硅体系中的相平衡
DOI：
10.1111/j.1151-2916.1964.tb14369.x
复制
发表时间：
1964
影响因子：
3.9
通讯作者：
D. Secrist
中科院分区：
文献类型：
--
作者：
D. Secrist
碳化硼-碳化硅系统是准二元的，并且在2300°± 20° C的温度下包含成分为70 ± 2重量%的B4 C和30 ± 2重量%的Sic的共晶。根据金相和X射线分析，在该温度下，B4 C在Sic中的固溶度和Sic在B4 C中的固溶度均小于2wt%。当组合物含有大于50重量%的Sic时，Sic对应于六方（a）同素异形体。SiC的立方（p）形式在含有小于50重量%的SiC的组合物中是稳定的。
The system boron carbide-silicon carbide is quasi binary and contains a eutectic of composition 70 ± 2 wt% B4C and 30 ± 2 wt% Sic at a temperature of 2300°± 20° C. The solid solubility of both B4C in Sic and Sic in B4C is less than 2 wt% at this temperature, based on metallographic and X-ray analyses. The Sic corresponds to the hexagonal (a) allotrope when the compositions contain more than 50 wt% Sic. The cubic (p) form of Sic is stabilized in compositions which contain less than 50 wt% Sic.