Formation of a reacted layer at the barrierless Cu(WN)∕Si interface
Formation of a reacted layer at the barrierless Cu(WN)∕Si interface
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DOI：
10.1063/1.2133911
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发表时间：
2005-11
影响因子：
4
通讯作者：
J. Chu;C. Lin
中科院分区：
文献类型：
--
作者：
J. Chu;C. Lin
本文报道了退火过程中Cu膜与无势垒Si衬底之间形成的反应层。在Ar scinN2混合气体中，通过Cu和W的反应共溅射沉积具有次要WN相的Cu膜。在530 °C下退火1小时后，在Cu（WN）scinSi界面处形成的约200 nm厚的反应层充当屏障以保护膜免受与Si的广泛相互作用。X射线衍射、聚焦离子束和透射电子显微镜的结果证实了该层的存在，并显示该层主要由Cu_2WO_4、Cu_3Si和Si_2N_2O组成。漏电流和电阻率的评估表明，在高达530 °C的温度下，具有稀释量的WN的Cu的上级热可靠性，表明其在先进的无阻挡层金属化中的潜在应用。
This letter reports the formation of a reacted layer between Cu film and barrierless Si substrate during annealing. The Cu films with a minor WN phase are deposited by reactive cosputtering of Cu and W in an Ar∕N2 mixture gas. After annealing at 530 °C for 1 h, a ∼200-nm-thick reacted layer formed at the Cu(WN)∕Si interface acts as a barrier to protect the film from extensive interactions with Si. X-ray diffraction, focused ion beam, and transmission electron microscopy results confirm the presence of this layer and show this layer is mainly composed of Cu2WO4, Cu3Si, and Si2N2O. Leakage current and resistivity evaluations reveal the superior thermal reliability of Cu with a dilute amount of WN at the temperatures up to 530 °C, suggesting its potential application in the advanced barrierless metallization.