Quenching of Photoluminescence in ZnO QDs Decorating Multiwalled Carbon Nanotubes
Quenching of Photoluminescence in ZnO QDs Decorating Multiwalled Carbon Nanotubes
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DOI：
10.1002/cphc.200900960
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发表时间：
2010-06-07
期刊：
影响因子：
2.9
通讯作者：
Basak, Durga
中科院分区：
文献类型：
--
作者：
Dutta, Mrinal;Jana, Santanu;Basak, Durga
采用一步法在多壁碳纳米管（MWCNT）侧壁上可控生长ZnO量子点（QDs），研究了ZnO QDs与MWCNT复合材料的光致发光（PL）特性。复合物的PL强度被淬灭，并且与仅有的ZnO量子点相比，寿命降低。的PL淬灭的起源进行了讨论，在能量转移，这是通过改变ZnO量子点的密度和尺寸的前体溶液的摩尔浓度，通过改变的ZnO和MWCNT的量来检查。
We report the controlled growth of ZnO quantum dots (QDs) on the sidewalls of multiwalled carbon nanotubes (MWCNTs) by a one-step process and study the effect on the photoluminescence (PL) properties of the ZnO QDs-MWCNT composite.; The PL intensity of the composite is quenched and the lifetime is reduced compared to the only ZnO QDs. The origin of the PL quenching is discussed in terms of energy transfer, which is examined by varying the density and size of ZnO QDs by changing the molar concentration of the precursor solution for ZnO and the amount of MWCNT.