A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation
A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation
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DOI：
10.4028/p-cxd7z3
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发表时间：
2022-05
期刊：
影响因子：
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通讯作者：
G. Baker;Fan Li;T. Dai;A. Renz;L. Zhang;Yun Yi Qi;V. Shah;P. Mawby;M. Antoniou;P. Gam
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文献类型：
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作者：
G. Baker;Fan Li;T. Dai;A. Renz;L. Zhang;Yun Yi Qi;V. Shah;P. Mawby;M. Antoniou;P. Gam
本文讨论了4 H-SiC半SJ结构的设计和仿真，其结果低于单极极限，同时也确保了实用和具有成本效益的实现。结果表明，具有10°侧壁角的半SJ结构将器件的注入窗口相对于全SJ增加了45%，同时保持约2 kV的高VBD和低罗恩，SP。这种设计有利于宽注入窗口和减小的沟槽纵横比，显著提高了器件的实际实现。由于倾斜的沟槽侧壁和n-底部辅助层（n-BAL），它还提供了更软的反向恢复特性，从而允许结构逐渐耗尽。
This paper discusses the design and simulation of 4H-SiC semi-SJ structures producing results that are below the unipolar limit, whilst also ensuring practical and cost-effective realisation. The results demonstrate that a semi-SJ structure with a 10° sidewall angle increases the implantation window of the device by 45%, relative to the full-SJ, whilst maintaining a high VBD of ~2 kV and a low RON,SP. This design facilitates a wide implantation window with a reduced trench aspect ratio, significantly improving the practical realisation of the device. It also offers softer reverse recovery characteristics as a result of both the angled trench sidewall and the n-bottom assist layer (n‑BAL) which allows for the structure to be depleted gradually.