Piezoelectric Properties of Bismuth Layer-Structured Ferroelectric Ceramics with Sr-Bi-Ti-Ta System
Piezoelectric Properties of Bismuth Layer-Structured Ferroelectric Ceramics with Sr-Bi-Ti-Ta System
复制标题
Sr-Bi-Ti-Ta系铋层状铁电陶瓷的压电性能
DOI：
10.1080/00150190211810
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发表时间：
2002
期刊：
影响因子：
0.8
通讯作者：
T. Takenaka
中科院分区：
文献类型：
--
作者：
H. Nagata;T. Takenaka
采用热锻（HF）方法研究了Sr-Bi-Ti-Ta系，特别是SrxBi 4 mxTi 3 mxTaxO 12（m = 3，x = 0-2）[SBTT 3（x）]系铋层状铁电（BLSF）陶瓷的晶粒取向对其压电性能的影响。晶粒取向（HF）的影响，提高压电性能的两个或更多的因素相比，非定向的。晶粒取向SBTT 3（0.3）陶瓷的机电耦合系数k33和压电常数d33分别为0.40和49.5pC/N。
Grain orientation effects of Sr-Bi-Ti-Ta system, especially Sr x Bi 4 m x Ti 3 m x Ta x O 12 ( m = 3, x = 0-2) [SBTT3( x )] ceramics which belong to a bismuth layer-structured ferroelectric (BLSF) family, are studied using the hot-forging (HF) method on their piezoelectric properties. The grain orientation (HF) effects enhance the piezoelectric properties by a factor of two or more if compared with non-oriented ones. The electromechanical coupling factor, k 33 and the piezoelectric constant, d 33 of the grain oriented SBTT3(0.3) ceramics were relatively high values of 0.40 and 49.5 pC/N.