Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3
Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3
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DOI：
10.1038/s41563-021-01004-4
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发表时间：
2021-05-20
期刊：
影响因子：
41.2
通讯作者：
Kondo, Takeshi
中科院分区：
文献类型：
--
作者：
Lin, Chun;Ochi, Masayuki;Kondo, Takeshi
角分辨光电子能谱被用来跟踪应变驱动的拓扑相变期间TaSe3的电子能带结构的演变。控制从拓扑绝缘体到正常绝缘体的相变可以允许自旋电流的开关。虽然半导体合金中的拓扑相变是通过元素替代实现的，但这种方法需要制备不同组成的材料。因此，它离需要可逆操作的可行的设备应用还很远。在这里，我们使用角分辨光电子能谱以及自旋和角分辨光电子能谱来可视化准一维超导体TaSe_3的应变驱动带结构演化。我们证明了它经历了可逆的应变诱导的拓扑相变，从具有自旋极化的准一维拓扑表面态的强拓扑绝缘体相到拓扑平凡的半金属和带绝缘相。准一维超导体TaSe3为设计拓扑自旋电子学提供了一个合适的平台，例如作为自旋电流的开关，对杂质散射具有很强的健壮性。
Angle-resolved photoemission spectroscopy is used to track the evolution of the electronic band structure of TaSe3 across a strain-driven topological phase transition.Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires preparation of materials with various compositions. Thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy and spin- and angle-resolved photoemission spectroscopy to visualize the strain-driven band-structure evolution of the quasi-one-dimensional superconductor TaSe3. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-one-dimensional topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-one-dimensional superconductor TaSe3 provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for a spin current that is robust against impurity scattering.