A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base
A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base
复制标题
DOI：
10.1088/1674-1056/18/9/063
复制
发表时间：
2009-09
影响因子：
1.7
通讯作者：
Zhang You-Run;Zhang Bo;Li Zhao-Ji;Deng Xiao-Chuan;Liu Xi-Ling
中科院分区：
文献类型：
--
作者：
Zhang You-Run;Zhang Bo;Li Zhao-Ji;Deng Xiao-Chuan;Liu Xi-Ling
本文提出了一种基区埋层的4 H-SiC双极结晶体管（BJT）的新结构。与传统结构相比，电流增益增加了约100%。这归因于为少数载流子在基底中传输而产生的内置电场，这基于2D器件模拟来解释。通过数值模拟，对埋层区的优化设计进行了探讨。
In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.