EXCITON BINDING-ENERGY IN QUANTUM WELLS
EXCITON BINDING-ENERGY IN QUANTUM WELLS
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DOI：
10.1103/physrevb.26.1974
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发表时间：
1982-01-01
影响因子：
3.7
通讯作者：
ESAKI, L
中科院分区：
文献类型：
--
作者：
BASTARD, G;MENDEZ, EE;ESAKI, L
给出了量子阱中基态激子的变分计算。对于GaAs-GaAlAs系统，从空间坐标不可分离的试波函数得到的结果在整个井厚范围内都是有效的，分别对应于二维和三维情况下的薄极限和厚极限。对于InAs-GaSb系统，电子和空穴存在于空间分离的区域，激子结合大大减少。在薄阱的极限下，结合能仅为二维值的四分之一左右。
Variational calculations are presented of the ground exciton state in quantum wells. For the GaAs-GaAlAs system, the results obtained from a trial wave function not separable in spatial coordinates are shown to be valid throughout the entire well-thickness range, corresponding in the thin and thick limits to two-and three-dimensional situations, respectively. For the InAs-GaSb system, in which electrons and holes are present in spatially separated regions, the exciton binding is substantially reduced. In the limit of thin wells, the binding energy is only about one-fourth of the two-dimensional value.