Morphologies and photoluminescence properties of GaN-based thin films grown on non-single-crystalline substrates
Morphologies and photoluminescence properties of GaN-based thin films grown on non-single-crystalline substrates
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非单晶衬底上生长的GaN基薄膜的形貌和光致发光特性
DOI：
10.1002/pssc.201600151
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
and Yoshifumi Murakami
中科院分区：
文献类型：
--
作者：
Yuichi Sato;Atomu Fujiwara;Shota Ishizaki;Shun Nakane;and Yoshifumi Murakami
研究了在非单晶衬底上生长的氮化镓基薄膜的形貌和光致发光特性。通过具有双氮等离子体单元的分子束外延装置在石英玻璃和无定形碳涂覆的石墨衬底上直接生长膜。在双氮等离子体电池同时操作的情况下共供应铟和镓为膜带来了隔离的纳米柱形结构。另一方面，当通过单个等离子体单元操作生长膜时，没有获得这样的结构。薄膜的光致发光（PL）特性在很大程度上取决于薄膜的形貌。从具有这种纳米柱形状结构的膜发射的PL峰的强度相当强，尽管与通过单个等离子体池操作生长的膜的那些峰能量相比，峰能量向较低能量侧移动。
Morphologies and photoluminescence properties of gallium nitride‐based thin films grown on non‐single‐crystalline substrates were investigated. The films were directly grown on quartz glass and amorphous‐carbon‐coated graphite substrates by a molecular beam epitaxy apparatus which has dual nitrogen plasma cells. Co‐supplying of indium and gallium with simultaneous operation of the dual nitrogen plasma cells brought isolated and nano‐pillar‐shaped structures to the films. On the other hand, such structures were not obtained when the films were grown by the single plasma cell operation. Photoluminescence (PL) properties of the films greatly depended upon the morphologies. The intensities of the PL peaks emitted from the films which have such nano‐pillar shaped structures were quite intense although the peak energies shifted to lower energy sides compared with those of the films grown by the single plasma cell operation.