Ultra-high flux pinning properties of BaMO3-doped YBa2Cu3O7−x thin films (M = Zr, Sn)
Ultra-high flux pinning properties of BaMO3-doped YBa2Cu3O7−x thin films (M = Zr, Sn)
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DOI：
10.1088/0953-2048/21/3/032002
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发表时间：
2008-03
影响因子：
3.6
通讯作者：
P. Mele;K. Matsumoto;T. Horide;A. Ichinose;M. Mukaida;Y. Yoshida;S. Horii;R. Kita
中科院分区：
文献类型：
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作者：
P. Mele;K. Matsumoto;T. Horide;A. Ichinose;M. Mukaida;Y. Yoshida;S. Horii;R. Kita
研究了bazro3掺杂YBa2Cu3O7−x薄膜和basno3掺杂YBa2Cu3O7−x薄膜的磁通钉扎性能。我们发现，basno3掺杂薄膜表现出非常高的全局钉住力Fp，分别为28.3 GN m−3 （77 K,）和103 GN m−3 (65 K,)，是bazro3掺杂薄膜的两倍。透射电镜分析表明，在两种膜中，掺杂相的纳米棒都被纳入。随着膜厚的增加，BaSnO3纳米棒呈直线状，而BaZrO3纳米棒呈弯曲状。
We studied the flux pinning properties of BaZrO3-doped YBa2Cu3O7−x and BaSnO3-doped YBa2Cu3O7−x films. We found that BaSnO3-doped films showed very high global pinning forces, Fp, of 28.3 GN m−3 (77 K, ) and 103 GN m−3 (65 K, ), twice that of BaZrO3-doped films. Transmission electron microscopy analysis showed that, in both films, nanorods of the dopant phase were incorporated. The BaSnO3 nanorods were nearly straight but the BaZrO3 nanorods became curved with the increasing film thickness.