GMR and Kondo Effects in Cu-Co Microwires
GMR and Kondo Effects in Cu-Co Microwires
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铜钴微线中的 GMR 和近藤效应
DOI：
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发表时间：
2017
期刊：
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通讯作者：
A. Zhukov
中科院分区：
文献类型：
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作者：
V. Zhukova;J. Mino;J. J. del Val;M. Ipatov;R. Varga;M. N. Baibich;G. Martínez;A. Granovsky;A. Zhukov
我们研究了退火对使用Taylor-Ulitovsky技术制备的Cu 100 −xCox（x = 5，10，20）玻璃涂层微丝的磁输运，磁性和结构特性的影响。制备态和退火态样品均表现出磁电阻效应。我们观察到一个Kondo样效应在制备和退火后的Cu 95 Co 5微丝和一个显着增加的巨磁电阻（GMR）在所有研究的Co-Cu退火后。考虑到退火样品的结构变化，讨论了GMR效应和Kondo类行为的起源。
We studied the effect of annealing on magneto-transport, magnetic, and structural properties of Cu100−xCox (x = 5, 10, 20) glass-coated microwires prepared using the Taylor-Ulitovsky technique. Both as-prepared and annealed samples exhibit magnetoresistance effect. We observed a Kondo-like effect in as-prepared and annealed Cu95Co5 microwire and a significant increase of the giant magnetoresistance (GMR) in all studied Co-Cu after annealing. The origin of GMR effect and Kondo-like behavior is discussed considering structural changes of the annealed samples.