Solution processing of transparent conducting epitaxial La:BaSnO3 films with improved electrical mobility
Solution processing of transparent conducting epitaxial La:BaSnO3 films with improved electrical mobility
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DOI：
10.1063/1.4914972
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发表时间：
2015-03
影响因子：
4
通讯作者：
R. Wei;Xianwu Tang;Z. Hui;X. Luo;J. Dai;Junliang Yang;W. Song;L. Chen;Xiaoguang Zhu;
中科院分区：
文献类型：
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作者：
R. Wei;Xianwu Tang;Z. Hui;X. Luo;J. Dai;Junliang Yang;W. Song;L. Chen;Xiaoguang Zhu;
La掺杂BaSnO3作为一种钙钛矿型透明导电氧化物，被认为是构建全透明钙钛矿型器件的重要材料。大面积高电迁移率薄膜的制备困难阻碍了La掺杂BaSnO3薄膜的发展。本文报道了化学溶液沉积Ba0.92La0.08SnO3−δ（BLSO）薄膜的研究结果。研究了后退火、气氛和晶格失配对薄膜性能的影响。1000 °C后退火可明显提高薄膜的晶化程度，从而提高薄膜的性能。在N2气氛中退火后，由于氧缺陷的增强，LaAlO3单晶衬底上BLSO的室温电阻率和电迁移率分别达到3.25 mΩ cm和11.09 cm 2 V−1 s−1。通过对基底的选择，可以容易地获得具有不同取向的BLSO薄膜，其物理性质表现为各向同性。此外，室温电阻率和迁移率…
As a type of perovskite transparent conducting oxides, La-doped BaSnO3 is considered as a very important material to construct all transparent perovskite devices. The difficulty in achievement of large-area films with high electrical mobility has hindered the development of La-doped BaSnO3 films. Here, we report the results about chemical solution deposition of Ba0.92La0.08SnO3−δ (BLSO) films. The post-annealing and atmosphere as well as lattice mismatch have been investigated. Post-annealing at 1000 °C can obviously improve the performance due to the enhanced crystallization. Under post-annealing in N2 atmosphere the room-temperature resistivity and electrical mobility can achieve 3.25 mΩ cm and 11.09 cm2 V−1 s−1, respectively, for the BLSO on LaAlO3 single crystal substrates due to the enhanced oxygen deficiencies. BLSO films with different orientation can be easily obtained by selection of the substrates, showing isotropic physical properties. Furthermore, the room-temperature resistivity and mobility ...