Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching
Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching
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DOI：
10.1088/0957-4484/21/9/095302
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发表时间：
2010-03-05
期刊：
影响因子：
3.5
通讯作者：
Schmidt, Volker
中科院分区：
文献类型：
--
作者：
de Boor, Johannes;Geyer, Nadine;Schmidt, Volker
通过结合激光干涉光刻和金属辅助蚀刻，我们能够生产出均匀直径小至 65 nm、密度超过 2 x 10(7) mm(-2) 的硅纳米线阵列。这些线是单晶的，垂直排列，排列成方形图案，并遵循几厘米（2）的严格周期性。所应用的技术允许定制纳米线尺寸和密度。使用受控且可扩展的工艺来制造亚 100 nm 硅纳米线是实现经济高效的电子和热电设备的重要一步。
By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.