Micro-trench measurements of the net deposition of carbon impurity ions in the DIII-D divertor and the resulting suppression of surface erosion
Micro-trench measurements of the net deposition of carbon impurity ions in the DIII-D divertor and the resulting suppression of surface erosion
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DOI：
10.1088/1402-4896/ac2af4
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发表时间：
2021
期刊：
影响因子：
2.9
通讯作者：
S. Abe;C. Skinner;I. Bykov;J. Guterl;A. Lasa;Y. Yeh;J. Coburn;D. Rudakov;C. Lasnier;H. Wang;A. Mclean;T. Abrams;B. Koel
中科院分区：
文献类型：
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作者：
S. Abe;C. Skinner;I. Bykov;J. Guterl;A. Lasa;Y. Yeh;J. Coburn;D. Rudakov;C. Lasnier;H. Wang;A. Mclean;T. Abrams;B. Koel
我们报告的碳杂质离子入射角和沉积速率，沿着与硅的侵蚀率，从测量的硅表面上的微工程沟槽暴露于L-模式氘等离子体在DIII-D偏滤器。暴露后的非原位分析确定元素图和浓度，碳沉积厚度，和硅表面的侵蚀。在沟槽地板上的碳沉积剖面显示碳离子阴影，这与ERO计算的极角和方位角的平均碳离子角分布（IAD）一致。测得的硅净侵蚀率与沉积碳浓度在不同的位置呈负相关。两种不同的离子下游沟槽斜坡结构的表面上的差异侵蚀表明，碳沉积速率的影响，由碳离子入射角，并显着抑制表面侵蚀。结果表明，C杂质离子的入射角，确定的IAD和表面形貌，强烈影响侵蚀速率以及主离子（D，T，He）的入射角。
We report carbon impurity ion incident angles and deposition rates, along with silicon erosion rates, from measurements of micro-engineered trenches on a silicon surface exposed to L-mode deuterium plasmas at the DIII-D divertor. Post exposure ex-situ analysis determined elemental maps and concentrations, carbon deposition thicknesses, and erosion of silicon surfaces. Carbon deposition profiles on the trench floor showed carbon ion shadowing that was consistent with ERO calculations of average carbon ion angle distributions (IADs) for both polar and azimuthal angles. Measured silicon net erosion rates negatively correlated with the deposited carbon concentration at different locations. Differential erosion of surfaces on two different ion-downstream trench slope structures suggested that carbon deposition rate is affected by the carbon ion incident angle and significantly suppressed the surface erosion. The results suggest the C impurity ion incident angles, determined by the IADs and surface morphology, strongly affect erosion rates as well as the main ion (D, T, He) incident angles.