Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells
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DOI：
10.1063/1.4934523
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发表时间：
2015-10
影响因子：
3.2
通讯作者：
J. Shao;Zhen Qi;Huan Zhao;Liangqing Zhu;Yuxin Song;Xiren Chen;F. Zha;Shaoling Guo;Shumin Wang
中科院分区：
文献类型：
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作者：
J. Shao;Zhen Qi;Huan Zhao;Liangqing Zhu;Yuxin Song;Xiren Chen;F. Zha;Shaoling Guo;Shumin Wang
采用光致发光（PL）技术研究了InGa（N）As/GaAs单量子阱威尔斯（SQW）界面的热退火效应。在750 °C退火比在600 °C退火导致更显著的PL峰的蓝移和窄化。每个PL谱都可以用两个PL分量再现：（i）低能分量（LE）保持能量不变，而高能分量（HE）随着激发而上升，对于In 0.375Ga 0.625As/GaAs在较高能量处显示，而对于In 0.375Ga 0.625N 0.012As 0.988/GaAs SQW在中等激发功率处与LE交叉。HE比相应的LE更宽，在750 °C下的退火使LE和HE变窄并且收缩它们的能量分离;（ii）PL组分是激子的，并且InGaNAs相对于InGaAs SQW显示出略微增强的激子效应;（iii）没有检测到PL能量随温度的典型S形演变，并且对于相同的退火识别出类似的蓝移和变窄。这些现象主要来自于界面过程。退火改善了层内质量，增强了界面In-Ga互扩散，减小了界面波动。界面互扩散没有明显的变化，由小的N含量，因此类似的PL组分变窄和蓝移观察到的SQW后，名义上相同的退火。与以前的研究进行了比较，在不同条件下的PL测量被证明是有效的探测量子阱中的界面演化。
The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells (SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence (PL). The annealing at 750 °C results in more significant blueshift and narrowing to the PL peak than that at 600 °C. Each of the PL spectra can be reproduced with two PL components: (i) the low-energy component (LE) keeps energetically unchanged, while the high-energy component (HE) moves up with excitation and shows at higher energy for the In0.375Ga0.625As/GaAs but crosses over with the LE at a medium excitation power for the In0.375Ga0.625N0.012As0.988/GaAs SQWs. The HE is broader than the corresponding LE, the annealing at 750 °C narrows the LE and HE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAs shows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolution of PL energy with temperature is detectable, and similar blueshift and narrowing are identified for the same annealing. The phenomena are mainly from the interfacial processes. Annealing improves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacial fluctuation. The interfacial interdiffusion does not change obviously by the small N content and hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominally identical annealing. Comparison with previous studies is made and the PL measurements under different conditions are shown to be effective for probing the interfacial evolution in QWs.