Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films
Magnetization switching induced by spin-orbit torque from Co2MnGa magnetic Weyl semimetal thin films
复制标题
DOI：
10.1063/5.0037178
复制
发表时间：
2021-02-08
影响因子：
4
通讯作者：
Mitani, Seiji
中科院分区：
文献类型：
--
作者：
Tang, Ke;Wen, Zhenchao;Mitani, Seiji
本文报道了Co2MnGa磁性Weyl半金属（WSM）薄膜中自旋电流产生的自旋轨道转矩（SOT）诱导的磁化开关。我们在MgO（001）衬底上沉积了具有高度b2有序结构的Co2MnGa外延薄膜。在Co2MnGa/Ti/CoFeB异质结构中对SOT进行了谐波霍尔测量，得到了较大的自旋霍尔效率（xi (SH)），为-7.8%。利用该结构进一步证明了垂直磁化CoFeB层的sot诱导磁化开关。研究了二次谐波信号的对称性、xi （SH）的厚度依赖性以及在外加电流作用下异常霍尔回路的位移。本研究不仅有助于理解磁性wsm基异质结构产生自旋电流的机制，而且为磁性wsm在自旋电子器件中的应用铺平了道路。
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with a highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure, and a relatively large spin Hall efficiency (xi (SH)) of -7.8% was obtained. The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, thickness dependence of xi (SH), and shift of anomalous Hall loops under applied currents were also investigated. This study not only contributes to the understanding of the mechanisms of spin-current generation from magnetic-WSM-based heterostructures but also paves the way for the applications of magnetic WSMs in spintronic devices.