Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence
Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence
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以光致发光为特征的 InGaN/GaN 蓝色激光二极管的不对称量子阱退化
DOI：
10.1063/1.5001372
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发表时间：
2017
影响因子：
4
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Wen Pengyan;Liu Jianping;Zhang Shuming;Zhang Liqun;Ikeda Masao;Li Deyao;Tian Aiqin;Zhang Feng;Cheng Yang;Zhou Wei;Yang Hui
研究了InGaN/GaN双量子阱蓝光激光器的温度、功率和电压相关的光致发光光谱。在低激发功率密度下，由于两个量子阱内置电场的不同，可以在低温和低激发功率密度下区分两个量子阱的发射。这一发现被用来研究InGaN/GaN蓝色激光二极管的退化。未老化的激光二极管(LD)观察到两个峰值，而老化的LD在3200 h后观察到一个峰值，直到没有检测到激光输出。光致发光光谱中高能峰的消失表明p侧量子阱的退化更严重，这与我们先前观察到的InGaN量子阱(QWS)的线宽和势能起伏都随着老化的LDS而减小的观察结果相一致。
The temperature, power, and voltage dependent photoluminescence spectra are studied in InGaN/GaN double quantum well blue laser diodes. Emissions from the two quantum wells can be distinguished at low temperature at low excitation power density due to the different built-in electric field in the two quantum wells. This finding is utilized to study the degradation of InGaN/GaN blue laser diodes. Two peaks are observed for the non-aged laser diode (LD), while one peak for the aged LD which performed 3200 h until no laser output is detected. The disappearance of the high energy peak in the photoluminescence spectra indicates a heavier degradation of the quantum well on the p-side, which agrees with our previous observation that both the linewidth and the potential fluctuation of InGaN quantum wells (QWs) reduced for the aged LDs.