Dual-gate low-voltage organic transistor for pressure sensing
Dual-gate low-voltage organic transistor for pressure sensing
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DOI：
10.7567/apex.10.021601
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发表时间：
2017-01
影响因子：
2.3
通讯作者：
Yushi Tsuji;H. Sakai;Linrun Feng;Xiaojun Guo;H. Murata
中科院分区：
文献类型：
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作者：
Yushi Tsuji;H. Sakai;Linrun Feng;Xiaojun Guo;H. Murata
我们在双栅有机压力传感器中同时实现了低压工作（- 5 V）和大漏极电流（ID）调制，其中压电层堆叠在低压有机场效应晶体管（OFET）上。在试验中，施加300kpa压力载荷时，内径从3.9 × 10−9 A变为2.5 × 10−11 A，内径对压力载荷和释放有明显的响应。在100 kPa的压力载荷下，对该装置进行了耐久性循环测试，在整个测试过程中，ID调制都得到了一致的再现。
We simultaneously achieved low-voltage operation (−5 V) and large drain current (ID) modulation in a dual-gate organic pressure sensor in which a piezoelectric layer was stacked on a low-voltage organic field-effect transistor (OFET). During testing, ID changed from 3.9 × 10−9 to 2.5 × 10−11 A when a 300 kPa pressure load was applied, and ID clearly responded to the pressure load and release. An endurance cycle test of the device was performed using a pressure load of 100 kPa, and the ID modulation was consistently reproduced throughout the test.