Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions with CoFeB Electrodes
Understanding Tunneling Magnetoresistance During Thermal Annealing in MgO-based Junctions with CoFeB Electrodes
复制标题
了解带有 CoFeB 电极的 MgO 基结热退火过程中的隧道磁阻
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
J. Xiao
中科院分区：
文献类型：
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作者：
Weigang Wang;C. Ni;G. Miao;C. Weiland;L. Shah;X. Fan;P. Parson;J. Jordan;X. Kou;Yaping Zhang;Ryan Stearrett;E. Nowak;R. Opila;J. Moodera;J. Xiao
研究了MgO基磁性隧道结中界面晶化和扩散过程的竞争及其对{Delta}{sub 1}带电子相干隧穿起始的影响。系统的研究这些结的热退火过程中的输运和磁阻显示了一个独特的行为的隧道电导在平行状态。确定了不同温度下获得巨隧穿磁电阻效应的最佳退火时间。磁电阻的演变由三个不同的区域，负责不同的贡献从CoFeB电极和MgO的障碍。整个现象可以通过基于Landauer隧穿图的经验模型来理解。
The competition between the interface crystallization and diffusion processes, their influence on the onset of symmetry-filtering coherent tunneling of {Delta}{sub 1} band electrons in the MgO-based magnetic tunnel junctions is investigated. Systematic study of the transport and magnetoresistance during thermal annealing of these junctions shows a unique behavior of the tunneling conductance in the parallel state. The optimal annealing time for achieving giant tunneling magnetoresistance at different temperatures is determined. The evolution of magnetoresistance consists of three distinct regions, responsible by different contributions from CoFeB electrodes and the MgO barrier. The whole phenomenon can be understood through an empirical model based on the Landauer tunneling picture.