Development of neutral‐beam‐assisted etcher
Development of neutral‐beam‐assisted etcher
复制标题
中性束辅助蚀刻机的开发
DOI：
10.1116/1.579657
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
T. Mizutani
中科院分区：
文献类型：
--
作者：
T. Yunogami;K. Yokogawa;T. Mizutani
先进的中性束辅助蚀刻机已开发用于极低损伤的SiO2蚀刻。蚀刻反应通过中性束和中性自由基来增强。这种增强效应首先由配备有中性束和中性自由基的独立源的原型蚀刻机证明。接下来，开发了一种简单的同轴型蚀刻器。只有一个同轴放电管产生两个圆柱形等离子体：内部的是中性束源;外部的是中性自由基源。典型的SiO2蚀刻速率为60 nm/min。为了进一步提高蚀刻速率，对光束和蚀刻特性进行了详细研究。我们发现，中性自由基密度必须增加。为了实现高蚀刻速率，设计并开发了串联型蚀刻机。它产生两个等离子体并排在只有一个放电管。该蚀刻机可以从非常接近样品的串联等离子体中提供高密度均匀的中性自由基。这款新的蚀刻机预计将…
Advanced neutral‐beam‐assisted etching machines have been developed for very low‐damage SiO2 etching. The etching reactions are enhanced by a neutral beam and neutral radicals. This enhancement effect was first demonstrated by a prototype etcher equipped with independent sources for the neutral beam and neutral radicals. Next, a simple co‐axial type etcher was developed. Only one co‐axial discharge tube generates two cylindrical plasmas: the inner one is a neutral beam source; the outer one is a neutral radical source. The typical SiO2 etch rate was 60 nm/min. To further increase the etch rate, the beam and etching characteristics were studied in detail. We found that the neutral radical density had to be increased. To achieve a high etch rate, a tandem type etcher was designed and developed. It generates two plasmas side by side in only one discharge tube. This etcher can supply high‐density uniform neutral radicals from one of the tandem plasmas very close to the specimen. This new etcher is expected to...