Effect of localized grain boundaries in semicrystalline silicon solar cells
Effect of localized grain boundaries in semicrystalline silicon solar cells
复制标题
半晶硅太阳能电池中局部晶界的影响
DOI：
10.1063/1.337049
复制
发表时间：
1986
影响因子：
3.2
通讯作者：
Y. Hayashi
中科院分区：
文献类型：
--
作者：
R. Shimokawa;Y. Hayashi
通过扫描单色光束感应电流（MBIC）技术，采用非常小的光斑尺寸（直径2μm）和750-1050 nm长波长光束，测量了单晶和半晶硅太阳能电池边界表面附近少数载流子扩散长度的空间变化。我们开发的技术使用具有线光谱的短弧氙灯源。研究发现，铸造半晶硅材料的大部分晶界都伴随着沿晶界的晶体缺陷，并且边界面的影响超出了少数载流子扩散长度的距离。此外，还估计了晶界附近晶体缺陷引起的有效少数载流子扩散长度，表明可以利用晶界有效影响宽度的概念来表征晶体缺陷集中的晶界。
The spatial variation of minority‐carrier diffusion length in the vicinity of a boundary surface in monocrystalline and semicrystalline silicon solar cells has been measured by the scanned monochromatic light beam induced current (MBIC) technique with a very small spot size (2μm in diameter) and 750–1050‐nm‐long wavelength light beam. The technique we developed uses a short‐arc xenon lamp source with line spectra. It was found that most of the grain boundaries in cast semicrystalline silicon materials were accompanied with crystal imperfections along them, and the effect of a boundary surface extended beyond the distance of a minority‐carrier diffusion length. Furthermore, the effective minority‐carrier diffusion length due to crystal imperfections in the vicinity of the grain boundary was estimated and it was indicated that the grain boundary where the crystal imperfections were concentrated could be characterized using the concept of the effective influence width of grain boundary.