Self-Supported NaTi2(PO4)(3) Nanorod Arrays: Balancing Na+ and Electron Kinetics via Optimized Carbon Coating for High-Power Sodium-Ion Capacitor

Self-Supported NaTi2(PO4)(3) Nanorod Arrays: Balancing Na+ and Electron Kinetics via Optimized Carbon Coating for High-Power Sodium-Ion Capacitor
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自支撑 NaTi2(PO4)(3) 纳米棒阵列:通过优化碳涂层平衡高功率钠离子电容器的钠和电子动力学

DOI:
10.1021/acsami.0c13766
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发表时间:
2020
影响因子:
9.5
通讯作者:
Qian Xuefeng
Qian Xuefeng
中科院分区:
材料科学2区
文献类型:
--
作者:
Chen Ming;Zhou Qinnan;Iqbal Asma;Liu Xuejiao;Nazakat Ali;Yan Changyu;Tian Heng;Li Wenqian;Zhang Yuchi;Dong Boxu;Zai Jiantao;Qian Xuefeng

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NaTi 2(PO 4)3(NTP)阳极材料具有较高的Na+扩散动力学,碳基材料可有效提高其有限的电子电导率。然而,NTP/C复合材料的低Na+扩散来自不均匀的碳混合或不可控的碳涂层不能跟上快速的电子转移,导致不期望的电化学性能。在此,在无粘合剂的自支撑涂覆的NTP纳米棒阵列(NTP@C NR)上设计了均匀且可控的碳层,以同时改善Na+和电子动力学。结果表明,NTP@C NR电极具有良好的初始库仑效率(ICE = 97%)、倍率性能(100 C时为89.1 mA h g-1)和稳定性,即使在30 C下循环1200次,容量留存率仍高达78.4%.以NTP@C NR为阳极,活性炭为阴极的钠离子电容器,在10 A g-1下的功率密度为9180.0 W kg-1,在1 A g-1下的7000次循环保持率为94.5%。这项工作将有助于平衡存储设备中应用的材料的离子和电子之间的传输动力学。
The NaTi2(PO4)3(NTP) anode materials exhibit high Na+diffusion dynamics; carbon-based materials can effectively improve its limited electronic conductivity. However, the low Na+diffusion of NTP/C composite materials from inhomogeneous carbon mixing or uncontrollable carbon coating cannot keep up with fast electron transfer, leading to undesirable electrochemical performances. Herein, a uniform and controllable carbon layer is designed on the self-supported-coated NTP nanorod arrays with binder-free (NTP@C NR) to improve Na+and electron kinetics simultaneously. As a result, the NTP@C NR electrodes possess initial coulombic efficiency (ICE = 97%), good rate capabilities (89.1 mA h g–1at 100 C), and stability with ≈78.4% of capacity retention rate at even 30 C over 1200 cycles. The sodium-ion capacitors with NTP@C NR as an anode and commercially activated carbon as a cathode exhibit ∼9180.0 W kg–1of power density at 10 A g–1and super high retention of ≈94.5% at 1 A g–1over 7000 cycles. This work will help balance transport kinetics between the ion and electron for materials applied in storage devices.