Integrated optoelectronic devices based on conjugated polymers
Integrated optoelectronic devices based on conjugated polymers
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DOI：
10.1126/science.280.5370.1741
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发表时间：
1998-06-12
期刊：
影响因子：
56.9
通讯作者：
Friend, RH
中科院分区：
文献类型：
--
作者：
Sirringhaus, H;Tessler, N;Friend, RH
展示了一种全聚合物半导体集成器件，它由一个高迁移率共轭聚合物场效应管(FET)驱动一个类似尺寸的聚合物发光二极管(LED)。FET使用区域规则聚(己基噻吩基)。它的性能接近无机非晶硅FET，场效应迁移率为每伏秒0.05至0.1平方厘米，通断电流比为>；10(6)。这种高的迁移率归因于局部自组织导致的扩展极化子态的形成，而不是在更无序的聚合物中发现的自定域极化子的可变范围跳跃。FET-LED器件代表着朝着全聚合物光电集成电路，如有源矩阵聚合物LED显示器迈出的一步。
An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10(6). The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.