Alkanethiolate Self-Assembled Monolayers As a Negative or Positive Resist for Electron Lithography
Alkanethiolate Self-Assembled Monolayers As a Negative or Positive Resist for Electron Lithography
复制标题
链烷硫醇自组装单层作为电子光刻的负性或正性抗蚀剂
DOI：
10.1021/jp808617y
复制
发表时间：
2009
影响因子：
3.7
通讯作者：
M. Zharnikov
中科院分区：
文献类型：
--
作者：
Yi;J. Liao;C. Weng;Yi;C. Chen;Ming;M. Zharnikov
以十八碳硫醇(ODT)在Au(111)表面的自组装单分子膜(SAM)为测试系统，证明脂肪族SAM既可以作为正负向抗蚀剂材料，也可以作为电子束光刻的正负抗蚀剂。这基本上是一个新的发现，因为这些系统通常被认为只是积极的抵抗，到目前为止还没有报道消极的抵抗行为。SAM抗蚀剂的行为被发现依赖于辐射剂量，并解释为在电子束处理的不同阶段，不同的辐射诱导过程的优势。只有在低辐射剂量下才能观察到负的抗蚀剂性能。在我们的实验条件下，在8−、10 mC/cm~2(50 eV电子)下发生了从负向正的抗阻转变。
Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8−10 mC/cm2 (50 eV electrons) under the conditions of our experiments.