STUDY ON THE PIEZORESISTIVE EFFECT OF CRYSTALLINE AND POLYCRYSTALLINE DIAMOND UNDER UNIAXIAL STRAINS
STUDY ON THE PIEZORESISTIVE EFFECT OF CRYSTALLINE AND POLYCRYSTALLINE DIAMOND UNDER UNIAXIAL STRAINS
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DOI：
10.1063/1.371498
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发表时间：
1999-10
影响因子：
3.2
通讯作者：
L. Fang;W. L. Wang;P. Ding;K. Liao;J. Wang
中科院分区：
文献类型：
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作者：
L. Fang;W. L. Wang;P. Ding;K. Liao;J. Wang
利用变形势理论和价带分裂模型分析了p型晶体材料在单轴应力作用下的压阻效应。得到了重孔带和轻孔带应变诱导分离条件下应变系数的计算公式。研究发现，金刚石中重空穴和轻空穴有效质量的巨大差异是造成p型金刚石压阻效应的主要因素之一。还根据 Mayadas-Shatzkes 模型讨论了 p 型多晶材料的压阻效应。结果表明，多晶材料的压阻效应与价带分裂和晶界散射有关。晶界散射起到了降低压阻效应的作用，使得多晶材料具有比晶体材料更小的应变系数。
The piezoresistive effect of p-type crystalline materials under uniaxial stress was analyzed by the deformation-potential theory and the valence-bands split-off model. The calculation formula of the gauge factor under the condition of the strain-induced separation of the heavy- and light-hole bands was obtained. It is found that the great difference of the effective mass between the heavy and light hole in diamond is one of the main factors which are responsible for the piezoresistive effect in the p-type diamond. The piezoresistive effect of the p-type polycrystalline material was also discussed from the Mayadas–Shatzkes model. The results showed that the piezoresistive effect of polycrystalline materials is related to both the valence-bands split off and the grain-boundary scattering. The grain-boundary scattering played a role of decreasing the piezoresistive effect, which made the polycrystalline materials have a smaller gauge factor than the crystalline materials.