Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide–alkoxide precursor-based sol–gel method
Electrical and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films prepared by a hydroxide–alkoxide precursor-based sol–gel method
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DOI：
10.1016/s0254-0584(01)00566-1
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发表时间：
2003-01
影响因子：
4.6
通讯作者：
M. Nayak;S.Y Lee;T. Tseng
中科院分区：
文献类型：
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作者：
M. Nayak;S.Y Lee;T. Tseng
以Ba-，Sr-氢氧化物和异丙醇钛（IV）为原料，乙二醇单甲醚为溶剂，采用溶胶-凝胶法制备了（Ba 0. 5Sr 0. 5）TiO 3钛酸锶钡薄膜。在相对较低的温度下得到结晶良好的薄膜。我们观察到随着退火温度的升高，晶粒长大并伴随着介电常数的增加。由该方法制备并在800°C下退火的膜显示出650的高介电常数。在700°C退火的薄膜的典型漏电流密度为0.8×10−6at 75 kVcm-1。薄膜的电学特性的变化与其微观结构相关，表明浓度的变化影响了薄膜的孔隙率和晶粒尺寸分布。结果表明，通过改变前驱体溶液的浓度，可以实现对微结构的调控。
Thin films of barium strontium titanate with composition (Ba0.5Sr0.5)TiO3were prepared by a sol–gel method using Ba-, Sr-hydroxides, titanium(IV) isopropoxide as source materials and 2-methoxyethanol as the solvent. Well-crystallised films were obtained at relatively low temperatures. We observed grain growth accompanied with increase in the dielectric constant as the annealing temperature increased. The films prepared from this method and annealed at 800°C showed high dielectric constant of 650. Typical leakage current density of the film annealed at 700°C is 0.8×10−6at 75kVcm–1. The change in electrical characteristics of the films has been correlated to their microstructure, which revealed that the concentration change affected the film porosity and grain size distribution. The results indicate that the microstructure could be tailored by changing the precursor solution concentration.