Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility
Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility
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单硫化锗：一种具有高载流子迁移率的新型二维半导体
DOI：
10.1039/c6tc00454g
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发表时间：
2016-01-01
影响因子：
6.4
通讯作者：
Li, Yafei
中科院分区：
文献类型：
--
作者：
Li, Feng;Liu, Xiuhong;Li, Yafei
具有中等带隙和高载流子迁移率的低维半导体材料在微电子学中的未来应用是高度寻求的。通过混合密度泛函理论计算，我们预测一种新的二维（2D）IV-VI材料，即单硫化锗（GeS）单层，是一个相当理想的候选者。根据我们的计算，GeS单层是半导体的间接带隙为2.34 eV，这可以有效地调整通过采用外部应变。值得注意的是，GeS单层的电子迁移率为3680 cm 2 V−1 s−1，远高于MoS 2单层。我们的计算还表明，GeS单层是一个稳定的结构，可以通过剥离或机械劈裂技术获得。这些发现使GeS单层膜成为未来微电子学应用的一种有前途的二维材料，并呼吁对二维IV-VI材料进行更多的研究。
Low-dimensional semiconducting materials with moderate band gaps as well as high carrier mobilities are highly sought for future application in microelectronics. By means of hybrid density functional theory computations, we predicted that a novel two-dimensional (2D) IV–VI material, namely germanium monosulfide (GeS) monolayer, is a rather desirable candidate. According to our computations, GeS monolayer is semiconducting with an indirect band gap of 2.34 eV, which can be effectively tuned by employing an external strain. Remarkably, the GeS monolayer has an electron mobility of 3680 cm2 V−1 s−1, which is much higher than that of MoS2 monolayer. Our computations also revealed that GeS monolayer is a stable structure and can be obtained by exfoliation or mechanical cleavage techniques. These findings render GeS monolayer a promising 2D material for applications in future microelectronics, and call for more research attention on 2D IV–VI materials.