In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers
In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers
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DOI：
10.1016/s0022-0248(00)00696-5
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发表时间：
2000-12-01
影响因子：
1.8
通讯作者：
Hommel, D
中科院分区：
文献类型：
--
作者：
Figge, S;Böttcher, T;Hommel, D
研究了金属有机气相外延生长的氮化镓在成核层生长、再结晶等各个阶段的微观演化过程。外延过度生长和聚结，借助原位正常入射反射率测量。通过原子力显微镜对各阶段的样品形态进行了原位表征。这些研究表明，由V/III前驱体比和反应器压力决定的成核层结构对随后生长的膜的聚结有很大影响。特别是，在低压生长中，可以通过调整高温脱毛层生长的初始V/III比来获得对聚结过程的额外控制，(C) 2000 Elsevier Science B.V.。
The microscopical evolution of GaN grown by metalorganic vapor-phase epitaxy is investigated at all its stages, as nucleation layer growth, recrystallization. epitaxial overgrowth and coalescence, with the help of in situ normal incidence reflectance measurements. Sample morphology was ex situ characterized at each stage by atomic force microscopy. These investigations revealed that the nucleation layer structure, determined by the V/III precursor ratio and the reactor pressure, strongly influences the coalescence of the subsequent grown film. Particularly, in low-pressure growth additional control of the coalescence process can be gained by adjusting the initial V/III ratio of the high-temperature epilayer growth, (C) 2000 Elsevier Science B.V. All rights reserved.