High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates
High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates
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DOI：
10.1063/1.4982656
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发表时间：
2017-05-08
影响因子：
4
通讯作者：
Khan, A.
中科院分区：
文献类型：
--
作者：
Muhtadi, S.;Hwang, S.;Khan, A.
我们报告室温至200摄氏度操作的n-Al 0. 65 Ga 0. 35 N沟道金属半导体场效应晶体管（MESFET）生长在高品质的AlN/蓝宝石模板。在此温度范围内，源漏电流、阈值电压在200 ℃和>100 mA/mm的电流下，场效应迁移率估计为90 cm（2）/V-s。对栅源肖特基势垒二极管随温度变化的电流-电压特性的分析表明，漏电流是由Frenkel-普尔发射。的电容-电压数据显示没有滞后，表明高品质的肖特基势垒界面。这些MESFET的使用作为高温电力电子或日盲紫外线传感器件具有很好的潜力。由AIP出版社出版。
We report room-temperature to 200 degrees C operation of n-Al0.65Ga0.35N channel metal semiconductor field effect transistors (MESFET) grown over high-quality AlN/sapphire templates. For this temperature range, the source-drain currents, threshold voltages, and dc-transconductance values remain nearly unchanged with an estimated field-effect mobility of similar to 90 cm (2)/V-s at 200 degrees C and currents of >100 mA/mm. The analysis of the temperature dependent current-voltage characteristics of the gate-source Schottky barrier diode reveals that the leakage currents arise from Frenkel-Poole emission. The capacitance-voltage data show no hysteresis, indicating a high quality Schottky barrier interface. These MESFET's have excellent potential for use as a high temperature power electronic or a solar-blind ultraviolet sensing device. Published by AIP Publishing.