Performance improvement of a p-Cu2O nanocrystal photocathode with an ultra-thin silver protective layer
Performance improvement of a p-Cu2O nanocrystal photocathode with an ultra-thin silver protective layer
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具有超薄银保护层的 p-Cu2O 纳米晶光电阴极的性能改进
DOI：
10.1039/c9cc04994k
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发表时间：
2019
影响因子：
4.9
通讯作者：
Luo Kai
中科院分区：
文献类型：
--
作者：
Li Yang;Luo Kai
通过高功率脉冲磁控溅射 (HiPIMS) 在定向生长的 Cu2O 单晶光电阴极上沉积 10 nm 厚的 Ag 薄膜。连续的Ag薄膜不仅形成致密的质子隔离器，而且还与Cu2O构建肖特基结，加速光生电子的传输。经过优化后，光电阴极与未修改的光电阴极相比，表现出大大改善的活性和稳定性，并且在 5 小时的光斩波计时安培分析法后仍保持超过 98% 的稳定性（最先进的）。 0 VRHE 下的持续光电流密度为 4.0 mA cm−2。
A Ag film with 10 nm thickness is deposited on a directionally grown Cu2O single crystal photocathode by high power impulse magnetron sputtering (HiPIMS). The continuous Ag film not only forms a dense proton isolator, but also constructs a Schottky junction with Cu2O to accelerate the transportation of photo-induced electrons. After optimization, the photocathode exhibits much-improved activity and stability versus the unmodified one, and over 98% stability (state-of-the-art) remains after 5 h of light-chopping chronoamperometry. The sustained photocurrent density is 4.0 mA cm−2 at 0 VRHE.