DFT investigation on the electronic and thermoelectric properties of ternary semiconductor AgBiS2 for energy conversion application
DFT investigation on the electronic and thermoelectric properties of ternary semiconductor AgBiS2 for energy conversion application
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DOI：
10.1016/j.cjph.2019.04.012
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发表时间：
2019-06
影响因子：
5
通讯作者：
A. Tabeti;M. Batouche;K. Bidai;A. Djied;T. Seddik;R. Khenata;H. Baltach;Xiaotian Wang
中科院分区：
文献类型：
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作者：
A. Tabeti;M. Batouche;K. Bidai;A. Djied;T. Seddik;R. Khenata;H. Baltach;Xiaotian Wang
