Tuning the magnetoresistance symmetry of Pt on magnetic insulators with temperature and magnetic doping
Tuning the magnetoresistance symmetry of Pt on magnetic insulators with temperature and magnetic doping
复制标题
通过温度和磁性掺杂调节磁绝缘体上 Pt 的磁阻对称性
DOI：
10.1063/1.4984221
复制
发表时间：
2017-05-29
影响因子：
4
通讯作者：
Ding, H. F.
中科院分区：
文献类型：
--
作者：
Miao, B. F.;Sun, L.;Ding, H. F.
我们比较研究了Pt/YIG(钇铁石榴石)、Pt/YIG(BB)(YIG衬底被Ar+轰击)和Pt/SiO_2(不同Fe掺杂水平)中有趣的磁电阻(MR)随温度的变化。随着温度的降低，PtYIG和PtYIG(BB)的MRS对称性从室温的R-z=R-x>；R-y转变为低温的R-x>；R-z>；R-y。在铂/YIG和铂/YIG(BB)中都有类似的行为，这意味着潜在的物理是由于磁散射，而不是界面上的纯自旋电流。通过改变SiO_2衬底中的Fe掺杂水平，我们可以进一步系统地调制Pt/SiO_2(Fe掺杂)中MR的对称性。掺杂能级的对称性也可以定性地解释低温下关于铂/YIG及其类似结构的MRS的争论。由AIP出版公司出版。
We present a comparison study of the temperature dependence of the intriguing magnetoresistance (MR) in Pt/YIG (yttrium iron garnet), Pt/YIG(BB) (the YIG substrate has been bombarded with Ar+), and Pt/SiO2 (with different Fe doping levels). With decreasing temperature, the MRs in Pt/YIG and Pt/YIG(BB) change symmetry from R-z = R-x>R-y at room temperature to R-x>R-z>R-y at low temperature. A similar behavior in both Pt/YIG and Pt/YIG(BB) implies that the underlying physics is due to magnetic scattering, instead of the pure spin current across the interface. By changing the Fe doping level in the SiO2 substrate, we can further systematically modulate the symmetry of MR in Pt/SiO2 (Fe doped). The doping level dependent symmetry can also qualitatively explain the controversy over the MRs of Pt/YIG and similar structures at low temperature. Published by AIP Publishing.