Impedance spectroscopy of Sb 2 Se 3 photovoltaics consisting of (Sb 4 Se 6 ) n nanoribbons under light illumination
Impedance spectroscopy of Sb 2 Se 3 photovoltaics consisting of (Sb 4 Se 6 ) n nanoribbons under light illumination
复制标题
由 (Sb 4 Se 6 ) n 纳米带组成的 Sb 2 Se 3 光伏电池在光照下的阻抗谱
作者：
Park J
Sb_2Se_3是一种一维（Sb_4Se_6）_n纳米带，作为一种有趣的光吸收剂，在光致发光（PV）研究领域引起了人们的关注。然而，需要进一步研究的性能限制因素在Sb 2Se 3 PV。在这项研究中，我们研究了光照射下的阻抗谱（IS）的电荷载流子在Sb_2Se_3 PV的行为。采用两种不同取向的（Sb 4Se 6）n纳米带研究了晶体取向对器件性能的影响。无论（Sb 4Se 6）n取向如何，在正向偏压下观察到负电容，代表在TiO 2/Sb 2Se 3界面处的复合途径。两种不同的Sb_2Se_3光伏的复合电阻和寿命的比较表明，通过将（Sb_4Se_6）_n条带平行于TiO_2层放置，可以形成更好的界面。基于这些观察结果，提出了一种理想的Sb 2Se 3/TiO 2界面结构，这将提高Sb 2Se 3 PV的性能接近其理论极限。
Sb2Se3, consisting of one-dimensional (Sb4Se6)n nanoribbons has drawn attention as an intriguing light absorber from the photovoltaics (PVs) research community. However, further research is required on the performance-limiting factors in Sb2Se3 PVs. In this study, we investigated the charge carrier behavior in Sb2Se3 PVs by impedance spectroscopy (IS) under light illumination. (Sb4Se6)n nanoribbons with two different orientations were used to investigate the effect of crystal orientation on the device performance. Regardless of the (Sb4Se6)n orientation, negative capacitance was observed at forward bias, representing a recombination pathway at the TiO2/Sb2Se3 interface. A comparison of the recombination resistances and lifetimes of two different Sb2Se3 PVs showed that a better interface could be formed by placing the (Sb4Se6)n ribbons parallel to the TiO2 layer. Based on these observations, an ideal structure of the Sb2Se3/TiO2 interface is proposed, which will enhance the performance of Sb2Se3 PVs toward its theoretical limit.