c‐axis preferred orientation of laser ablated epitaxial PbTiO3 films and their electrical properties
c‐axis preferred orientation of laser ablated epitaxial PbTiO3 films and their electrical properties
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激光烧蚀外延PbTiO3薄膜的c轴择优取向及其电性能
DOI：
10.1063/1.111120
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发表时间：
1994
影响因子：
4
通讯作者：
M. Okuyama
中科院分区：
文献类型：
--
作者：
H. Tabata;O. Murata;T. Kawai;S. Kawai;M. Okuyama
用ArF准分子激光烧蚀法在Pt（100）/MgO（100）基电极上制备了PbTiO_3铁电外延薄膜。这些膜的X射线衍射图案显示当膜在沉积后以高于75 °C/min的速度冷却时具有0.5的摇摆角的c轴取向。薄膜具有清晰的铁电电滞回线。薄膜的介电常数为130，剩余极化率为80 μC/cm ~ 2。这些值与理论预测值几乎相同。在10 Hz下，即使没有极化处理，薄膜的热释电系数也在1000-1500 V/W之间。
Ferroelectric PbTiO3 epitaxial thin films have been formed on a base electrode of Pt(100)/MgO(100) using ArF excimer laser ablation. The x‐ray diffraction patterns of these films show c‐axis orientation with a rocking angle of 0.5 when the film is cooled faster than 75 °C/min after the deposition. The films exhibit clear and large ferroelectric hysteresis loops. The dielectric constant of the films is 130 and remnant polarization is 80 μC/cm2. The values are almost the same as those theoretically predicted. The pyroelectric coefficient of these films is 1000–1500 V/W at 10 Hz, even without poling treatment.