Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5 (GST)
Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5 (GST)
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DOI：
10.1002/zaac.201700211
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发表时间：
2017-08
期刊：
影响因子：
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通讯作者：
Nicole Harmgarth;Florian Zörner;Phil Liebing;E. Burte;M. Silinskas;F. Engelhardt;F. Edelmann
中科院分区：
文献类型：
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作者：
Nicole Harmgarth;Florian Zörner;Phil Liebing;E. Burte;M. Silinskas;F. Engelhardt;F. Edelmann
本文综述了相变材料锗锑碲化物Ge2Sb2Te5（GST）的前体化学。GST薄膜可以通过采用化学气相沉积（CVD）或原子层沉积（ALD）技术来沉积。在这两种情况下，层沉积的成功关键取决于适当选择合适的分子前体。以前报道的工艺主要依赖于锗、锑和碲的简单醇盐、烷基化物、酰胺和卤化物。更复杂的前体设计提供了许多有前途的新的氮杂环丙烷和胍。
This review provides an overview of the precursor chemistry that has been developed around the phase-change material germanium-antimony-telluride, Ge2Sb2Te5 (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. In both cases, the success of the layer deposition crucially depends on the proper choice of suitable molecular precursors. Previously reported processes mainly relied on simple alkoxides, alkyls, amides and halides of germanium, antimony, and tellurium. More sophisticated precursor design provided a number of promising new aziridinides and guanidinates.