Electrodeposition of Crystalline Gallium-Doped Germanium and SixGe1−x from an Ionic Liquid at Room Temperature
Electrodeposition of Crystalline Gallium-Doped Germanium and SixGe1−x from an Ionic Liquid at Room Temperature
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DOI：
10.1002/celc.201402374
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发表时间：
2015-04
影响因子：
1.1
通讯作者：
A. Lahiri;M. Olschewski;T. Carstens;S. Abedin;F. Endres
中科院分区：
文献类型：
--
作者：
A. Lahiri;M. Olschewski;T. Carstens;S. Abedin;F. Endres
在本文中，我们展示了在室温下从离子液体中直接在铜上电沉积掺杂镓的晶体锗和SixGe1−x。锗和SixGe1−x被电沉积在铜上的薄层电沉积镓上，从而形成晶体掺镓锗和SixGe1−x。从微观结构看，Ge和SixGe1−x在Ga中溶解形成银汞合金，然后再结晶形成晶体结构。x射线衍射证实了结晶相的形成。扫描隧道光谱法测得掺镓锗的间接带隙为（0.9±0.1）eV。
In this paper, we show the electrodeposition of both gallium-doped crystalline germanium and SixGe1−x directly on copper at room temperature from an ionic liquid. Germanium and SixGe1−x were electrodeposited on a thin layer of electrodeposited gallium on copper, thereby leading to the formation of crystalline gallium-doped germanium and SixGe1−x. From the microstructure, it appears that Ge and SixGe1−x dissolve in Ga to form an amalgam, which then recrystallises to form a crystalline structure. X-ray diffraction confirmed the formation of crystalline phases. The indirect band gap of the gallium-doped germanium measured by using scanning tunnelling spectroscopy is (0.9±0.1) eV.