Fabrication, crystallographic and magnetic properties of SrM perpendicular films on Au nano-dot arrays
Fabrication, crystallographic and magnetic properties of SrM perpendicular films on Au nano-dot arrays
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DOI：
10.1016/j.jallcom.2009.11.174
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发表时间：
2010-03
影响因子：
6.2
通讯作者：
A. Kaewrawang;A. Ghasemi;Xiaoxi Liu;A. Morisako
中科院分区：
文献类型：
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作者：
A. Kaewrawang;A. Ghasemi;Xiaoxi Liu;A. Morisako
采用直流磁控溅射法在（00l）取向的蓝宝石单晶（Al2O3（00l））、（111）取向的MgO单晶（MgO（111））和康宁玻璃上制备了Au纳米点上的锶铁氧体（SrM）薄膜。为了改善Au纳米点的晶体取向，已经进行了使用单晶作为衬底的尝试。研究了衬底和底层对SrM薄膜的晶粒取向、磁性能和微结构的影响。SrM以其c轴垂直于膜取向生长。单晶Al_2O_3（00l）衬底垂直方向的折射率和折射率矩形比最大值分别为3.0kOe和0.51。研究发现，沉积在Au纳米点上的SrM颗粒间的磁相互作用小于连续薄膜。
Strontium ferrite (SrM) thin films on Au nano-dots were deposited on single-crystal sapphire with (00l) orientation (Al2O3(00l)), single crystal MgO with (111) orientation (MgO (111)) and Corning glass by employing dc magnetron sputtering system. In order to improve the crystalline orientation for Au nano-dots, an attempt to use the single crystal as the substrate has been carried out. The effects of the substrates and underlayer on grain orientation, magnetic properties, and microstructure of SrM thin films were studied. The SrM grows with its c-axis oriented perpendicularly to the film. The maximum of coercivity and remanent squareness ratio in perpendicular direction for single crystal Al2O3(00l) substrate is 3.0kOe and 0.51, respectively. It is found that the magnetic interaction between SrM grains deposited on Au nano-dots is less than that for the continuous film.