Highly-ordered Triptycene Modifier Layer Based on Blade Coating for Ultraflexible Organic Transistors
Highly-ordered Triptycene Modifier Layer Based on Blade Coating for Ultraflexible Organic Transistors
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DOI：
10.1038/s41598-019-45559-4
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发表时间：
2019-06-24
影响因子：
4.6
通讯作者：
Sekitani, Tsuyoshi
中科院分区：
文献类型：
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作者：
Kondo, Masaya;Kajitani, Takashi;Sekitani, Tsuyoshi
我们提出了一种用于高迁移率有机薄膜晶体管(OTFT)的基于常温溶液处理三联苯衍生物(TRIP)的高度有序的聚合物表面改性层。TRIP分子的嵌套堆积导致了二维六方阵列的形成，这些阵列在没有锚定基团的聚合物介质表面一维堆积。以往的研究表明，TRIP表面更有利于有机半导体(OSCs)的生长，从而提高OTFTs的迁移率。然而，尽管TRIP改性层是在高真空环境下通过热蒸发实现的，但它仍然存在晶界无序，阻碍了OSCs的最佳生长。为了制作具有更高迁移率的OTFT，需要一个无序的跳跃层。我们通过刀片涂层在聚合物介质上制备了高度有序的Trip层。此外，我们还阐明了与TVE制备的无序Trip层相比，高度有序的Trip改性层使OTFT的迁移率提高了40%以上。最后，我们实现了一个由具有高度有序的Trip层的OTFT组成的环形振荡器。
We present a highly ordered surface modification layer for polymers based on ambient solution-processed triptycene (Trip) derivatives for high-mobility organic thin-film transistors (OTFTs). The nested packing of Trip molecules results in the formation of 2D hexagonal arrays, which stack one-dimensionally on the surface of polymer dielectrics without anchoring groups. The Trip surface was previously shown to be preferable for the growth of organic semiconductors (OSCs), and hence for enhancing the mobility of OTFTs. However, although the Trip modifier layer has been realized by thermal evaporation in a high-vacuum environment (TVE), it still has grain-boundary disorders that hinder the optimal growth of OSCs. To fabricate OTFTs with higher mobility, a disorder-free Trip layer is needed. We developed highly ordered Trip layers on polymer dielectrics via blade coating. In addition, we clarified that the highly ordered Trip modifier layer enhances the mobility of the OTFTs by more than 40%, relative to the disordered Trip layer prepared by TVE. Finally, we realized a ring oscillator composed of OTFTs with a highly ordered Trip layer.