Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
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DOI：
10.1143/apex.2.061004
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发表时间：
2009-06
影响因子：
2.3
通讯作者：
R. Senda;Tetsuya Matsubara;D. Iida;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki
中科院分区：
文献类型：
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作者：
R. Senda;Tetsuya Matsubara;D. Iida;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki
我们在高结晶质量的厚m面GaInN底层上制备了GaInN/GaN多量子威尔斯（MQW），并与在高结晶质量的m面GaN底层上制备的相同GaInN/GaN多量子阱的积分光致发光（PL）强度进行了比较。来自MQW的光发射波长为紫色（λ 396 nm）、蓝色（λ 450 nm）和绿色（λ 535 nm）。从高结晶质量厚GaInN底层上的GaInN/GaN紫色、蓝色和绿色MQW获得的积分PL强度分别是m面GaN底层上的MQW的积分PL强度的1.1倍、1.5倍和2.1倍。
We fabricated GaInN/GaN multiple quantum wells (MQWs) on a high-crystalline-quality thick m-plane GaInN underlying layer, and the integral photoluminescence (PL) intensity was compared with that of the same GaInN/GaN MQWs on a high-crystalline-quality m-plane GaN underlying layer. The light emission wavelengths from the MQWs were violet (∼396 nm), blue (∼450 nm), and green (∼535 nm). The integral PL intensities obtained from the GaInN/GaN violet, blue, and green MQWs on the high-crystalline-quality thick GaInN underlying layer were 1.1, 1.5, and 2.1 times higher than these of the MQWs on the m-plane GaN underlying layer, respectively.