Radiation-induced reactions in novolak-based chemically amplified resists.
Radiation-induced reactions in novolak-based chemically amplified resists.
复制标题
基于酚醛清漆的化学放大抗蚀剂中的辐射诱导反应。
DOI:
10.2494/photopolymer.8.37
复制
发表时间:
1995
影响因子:
0.8
通讯作者:
S. Tagawa
中科院分区:
文献类型:
--
作者:
T. Kozawa;M. Uesaka;Takeo Watanabe;Y. Yamashita;Y. Yoshida;S. Tagawa
Radiation-induced reactions in novolak-based chemically amplified resists have been studied by means of pulse radiolysis in the time ranges from the order of picoseconds to that of minutes. In the chemically amplified electron beam and X-ray resists, the electron scavenging effect of onium salts delays the recombination of cationic intermediates with electrons and prolongs the lifetime of the cationic intermediates. The absorption due to an phenoxyl radical of novolak was observed at 400nm by electron beam exposure. It is thought that the proton adducts and phenoxyl radicals of novolak were formed by ion-molecular reactions between novolak and its radical cations. Furthermore, long-lived intermediates were observed in the novolak-based chemically amplified resists.