Flame‐retardant epoxy resins with high glass‐transition temperatures. II. Using a novel hexafunctional curing agent: 9,10‐dihydro‐9‐oxa‐10‐phosphaphenanthrene 10‐yl‐tris(4‐aminophenyl) methane
Flame‐retardant epoxy resins with high glass‐transition temperatures. II. Using a novel hexafunctional curing agent: 9,10‐dihydro‐9‐oxa‐10‐phosphaphenanthrene 10‐yl‐tris(4‐aminophenyl) methane
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DOI：
10.1002/pola.21072
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发表时间：
2005-12
期刊：
影响因子：
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通讯作者：
Ching Hsuan Lin;S. Cai;C. Lin
中科院分区：
文献类型：
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作者：
Ching Hsuan Lin;S. Cai;C. Lin
以三乙胺为酸受体，通过9，10-二氢-9-氧杂-10-磷杂菲10-氧化物和氯代副玫瑰苯胺的亲核加成反应，合成了一种新型的含磷三胺化合物[9，10-二氢-9-氧杂-10-磷杂菲10-基-三(4-氨基苯基)甲烷(DOPO-TA)]。通过红外光谱、质量谱、核磁共振谱和元素分析确证了其结构。DOPO-TA作为双酚A二缩水甘油醚(DGEBA)和环氧双环戊二烯(Hp7200)的固化剂。对固化后的环氧树脂的玻璃化转变温度(Tg)、热分解温度、阻燃、吸湿和介电性能进行了评价。固化后的DGEBA/DOPO-TA和hp7200/DOPO-TA的玻璃化转变温度分别为171℃和190℃。在引入阻燃元素后，这种高Tg现象在文献中很少见。阻燃性能随磷含量的增加而提高，DGEBA/DOPO-TA/二氨基二苯甲烷(DDM)体系的阻燃性能达到UL-94 V-0级，P含量为1.80wt%，hp7200/DOPO-TA/DDM体系的阻燃性能为1.46wt%。DGEBA/DOPO-TA和hp7200/DOPO-TA固化体系的介电常数分别为2.91和2.82，表明DOPO-TA固化体系具有较低的介电性能。
We synthesized a novel phosphorus containing triamine [9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-yl-tris(4-aminophenyl) methane (dopo-ta)] from the nucleophilic addition of 9,10-dihydro-9-oxa-10-phosphaphenanthrene 10-oxide and pararosaniline chloride, using triethylamine as an acid receiver. We confirmed the structure of dopo-ta by IR, mass, and NMR spectra and elemental analysis. dopo-ta served as a curing agent for diglycidyl ether of bisphenol A (DGEBA) and dicyclopentadiene epoxy (hp7200). Properties such as the glass-transition temperature (Tg), thermal decomposition temperature, flame retardancy, moisture absorption, and dielectric properties of the cured epoxy resins were evaluated. The Tg's of cured DGEBA/dopo-ta and hp7200/dopo-ta were 171 and 190 °C, respectively. This high Tg phenomenon is rarely seen in the literature after the introduction of a flame-retardant element. The flame retardancy increased with the phosphorus content, and a UL-94 V-0 grade was achieved with a phosphorus content of 1.80 wt % for DGEBA/dopo-ta/diamino diphenylmethane (DDM) systems and 1.46 wt % for hp7200/dopo-ta/DDM systems. The dielectric constants for DGEBA/dopo-ta and hp7200/dopo-ta were 2.91 and 2.82, respectively, implying that the dopo-ta curing systems exhibited low dielectric properties.