Correction to “From n- to p-Type Material: Effect of Metal Ion on Charge Transport in Metal–Organic Materials”
Correction to “From n- to p-Type Material: Effect of Metal Ion on Charge Transport in Metal–Organic Materials”
复制标题
修正“从 n 型材料到 p 型材料：金属离子对金属有机材料中电荷传输的影响”
DOI：
10.1021/acsami.2c05799
复制
发表时间：
2022
影响因子：
9.5
通讯作者：
So, Monica C.
中科院分区：
文献类型：
--
作者：
Yoon, Sungwon;Talin, A. Alec;Stavila, Vitalie;Mroz, Austin M.;Bennett, Thomas D.;He, Yuping;Keen, David A.;Hendon, Christopher H.;Allendorf, Mark D.;So, Monica C.
基于金属有机骨架(MOF)的一类有趣的二维(2D)材料最近被开发出来，它具有导电性，这在这些纳米多孔材料中是罕见的。导电MOF的出现引发了人们对其基本电子性质的质疑，但在这方面的研究很少。本文对金属取代对M-HITP电荷输运性质的影响进行了理论和实验研究，其中M=Ni或Pt，HITP=2，3，6，7，10，11-六亚氨基三苯基。结果表明，M-HITP多数电荷载流子的同一性可以在不有意引入电子活性掺杂剂的情况下改变。我们观察到金属离子的选择对电荷传输有很大的影响。利用已知的Ni-HITP结构，我们合成了一种新的非晶态材料a-Pt-HITP，它虽然是非晶态的，但在解溶后仍然是多孔的。重要的是，这种新材料表现出p型电荷输运行为，而不像Ni-HITP表现出n型电荷输运行为。这些结果表明，通过适当选择金属离子，可以在相同的MOF拓扑结构中获得p型和n型材料。
An intriguing new class of two-dimensional (2D) materials based on metal–organic frameworks (MOFs) has recently been developed that displays electrical conductivity, a rarity among these nanoporous materials. The emergence of conducting MOFs raises questions about their fundamental electronic properties, but few studies exist in this regard. Here, we present an integrated theory and experimental investigation to probe the effects of metal substitution on the charge transport properties of M-HITP, where M = Ni or Pt and HITP = 2,3,6,7,10,11-hexaiminotriphenylene. The results show that the identity of the M-HITP majority charge carrier can be changed without intentional introduction of electronically active dopants. We observe that the selection of the metal ion substantially affects charge transport. Using the known structure, Ni-HITP, we synthesized a new amorphous material, a-Pt-HITP, which although amorphous is nevertheless found to be porous upon desolvation. Importantly, this new material exhibits p-type charge transport behavior, unlike Ni-HITP, which displays n-type charge transport. These results demonstrate that both p- and n-type materials can be achieved within the same MOF topology through appropriate choice of the metal ion.