Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
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DOI：
10.1063/1.4921920
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发表时间：
2015-06-01
影响因子：
4
通讯作者：
Machida, Tomoki
中科院分区：
文献类型：
--
作者：
Moriya, Rai;Yamaguchi, Takehiro;Machida, Tomoki
我们对石墨烯/MoS2/金属垂直场效应晶体管的电流-电压（I-V）特性进行了详细研究。由于其低态密度，石墨烯中的费米能级对其载流子密度以及外部电场非常敏感。在石墨烯和石墨烯/MoS2/金属异质结构中的金属层之间施加偏置电压VB以驱动电流通过范德华界面时，MoS2电介质上的电场引起石墨烯费米能级的变化。当石墨烯的费米能级与狄拉克点重合时，测量的I-V曲线出现显着的非线性，从而使我们能够进行狄拉克点的光谱分析。通过检测不同背栅电压的狄拉克点，我们发现纳米厚的 MoS2 层的电容可以通过简单的直流传输测量来确定。 (C) 2015 AIP 出版有限责任公司。
We performed detailed studies of the current-voltage (I-V) characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for driving current through the van der Waals interface, the electric field across the MoS2 dielectric induces a shift in the Fermi level of graphene. When the Fermi level of graphene coincides with the Dirac point, a significant nonlinearity appears in the measured I-V curve, thus enabling us to perform spectroscopy of the Dirac point. By detecting the Dirac point for different back-gate voltages, we revealed that the capacitance of the nanometer-thick MoS2 layer can be determined from a simple DC transport measurement. (C) 2015 AIP Publishing LLC.