Fabrication of nanometer‐scale structures using atomic force microscope with conducting probe
Fabrication of nanometer‐scale structures using atomic force microscope with conducting probe
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使用带有导电探针的原子力显微镜制造纳米级结构
DOI：
10.1116/1.579062
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
M. Yasutake
中科院分区：
文献类型：
--
作者：
T. Hattori;Yasunori Ejiri;Kenji Saito;M. Yasutake
纳米尺度的结构是使用电场增强氧化，使用原子力显微镜与导电探针。研究了氧化带的厚度和宽度与外加电压和外加电压时间的关系。此外，沟槽的深度，这是通过去除氧化物条纹，在硅表面上制造的依赖关系上施加的电压和施加电压的时间，进行了研究。在此基础上对氧化机理进行了探讨。
Nanometer‐scale structures were fabricated using electric field enhanced oxidation using an atomic force microscope with a conducting probe. The dependencies of thicknesses and widths of oxide stripes on applied voltage and time during which voltage is applied, were investigated. Also, the dependencies of depths of trenches, which are fabricated on the silicon surface by removing oxide stripes, on applied voltage and time during which voltage is applied, were investigated. The oxidation mechanism is discussed based on these investigations.