Giant spin-valve effect in planar spin devices using an artificial implemented nanolength Mott-insulator region
Giant spin-valve effect in planar spin devices using an artificial implemented nanolength Mott-insulator region
复制标题
使用人工实现的纳米长度莫特绝缘体区域的平面自旋器件中的巨大自旋阀效应
DOI：
10.1002/adma.202300110
复制
发表时间：
2023
影响因子：
29.4
通讯作者：
and S. Ohya
中科院分区：
文献类型：
--
作者：
T. Endo;S. Tsuruoka;Y. Tadano;S. Kaneta-Takada;Y. Seki;M. Kobayashi;L. D. Anh;M. Seki;H. Tabata;M. Tanaka;and S. Ohya
开发实现基于氧化物的纳米级平面集成电路的技术对于下一代多功能电子产品具有很高的需求。氧化物电路可以具有各种独特的功能，包括铁磁性、铁电性、多铁性、超导性和机械柔性。特别是，对于自旋晶体管应用，由于存在多个氧化物相，物理特性的宽可调性对于沟道和铁磁电极之间的精确电导率匹配非常有价值。该特性对于实际的自旋晶体管操作至关重要。在此，基于平面型（La，Sr）MnO 3（LSMO）的自旋阀器件表现出高达140%的相当大的磁阻（MR）比。该MR比比在过去三十年中研究的基于半导体的平面器件获得的最佳值大10-100倍。这种结构是通过使用金属LSMO的相变实现人工纳米长度莫特绝缘体势垒区来制备的。莫特绝缘体区的势垒高度仅为55 meV，这使得大MR比成为可能。此外，一个成功的电流调制，这是自旋晶体管的基本功能，示出。这些结果为实现具有传统半导体无法实现的独特功能的氧化物平面电路开辟了新途径。
Developing technology to realize oxide‐based nanoscale planar integrated circuits is in high demand for next‐generation multifunctional electronics. Oxide circuits can have a variety of unique functions, including ferromagnetism, ferroelectricity, multiferroicity, superconductivity, and mechanical flexibility. In particular, for spin‐transistor applications, the wide tunability of the physical properties due to the presence of multiple oxide phases is valuable for precise conductivity matching between the channel and ferromagnetic electrodes. This feature is essential for realistic spin‐transistor operations. Here, a substantially large magnetoresistance (MR) ratio of up to ≈140% is demonstrated for planar‐type (La,Sr)MnO3(LSMO)‐based spin‐valve devices. This MR ratio is 10–100 times larger than the best values obtained for semiconductor‐based planar devices, which have been studied over the past three decades. This structure is prepared by implementing an artificial nanolength Mott‐insulator barrier region using the phase transition of metallic LSMO. The barrier height of the Mott‐insulator region is only 55 meV, which enables the large MR ratio. Furthermore, a successful current modulation, which is a fundamental functionality for spin transistors, is shown. These results open up a new avenue for realizing oxide planar circuits with unique functionalities that conventional semiconductors cannot achieve.