Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz
Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz
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DOI：
10.1109/wamicon.2012.6208427
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发表时间：
2012-04
期刊：
影响因子：
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通讯作者：
P. Saad;P. Colantonio;J. Moon;L. Piazzon;F. Giannini;K. Andersson;B. Kim;C. Fager
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文献类型：
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作者：
P. Saad;P. Colantonio;J. Moon;L. Piazzon;F. Giannini;K. Andersson;B. Kim;C. Fager
本文介绍了一种1.8 GHz和2.4 GHz高效并发双频段GaN-HEMT功率放大器的设计、实现和实验结果。一个裸芯片的方法，结合谐波源拉/负载拉模拟方法，被用来设计和实现的谐波调谐双频PA。对于42.3 dBm的连续波输出功率，在两个频带中的测量增益为12 dB，而在两个频带中的功率附加效率为64%。同时使用10 MHz LTE和WiMAX信号的线性调制测量显示，在1.8 GHz和2.4 GHz下，平均PAE为25%，相邻信道泄漏比分别为-48 dBc和-47 dBc。
This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10 MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively.