SAM: A new GHz sampling ASIC for the HESS-II front-end electronics
SAM: A new GHz sampling ASIC for the HESS-II front-end electronics
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DOI：
10.1016/j.nima.2006.05.052
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发表时间：
2006-11-01
影响因子：
1.4
通讯作者：
Vincent, P.
中科院分区：
文献类型：
--
作者：
Delagnes, E.;Degerli, Y.;Vincent, P.
H.E.S.S.II前端电子器件具有20gev的能量阈值，将需要比h.e.s.s.i更高的采集速率能力和更大的动态范围。这些限制导致了一种新的ASIC的发展，称为快速模拟存储器SAM，以取代用于H.E.S.S.-I的ARS。SAM芯片具有用于PMT的低增益和高增益输出的2个通道，每个通道具有256个模拟存储单元的深度。采样频率从0.7到2GS/s可调，一个事件的读出时间从275降低到2.3 ps， SAM输入带宽和动态范围分别增加到300 MHz和11比特以上。(c) 2006 Elsevier B.V.版权所有
The H.E.S.S.II front-end electronics, with its 20 GeV energy threshold, will require a much higher acquisition rate capability and a larger dynamic range than was relevant for H.E.S.S.-I. These constraints led to the development of a new ASIC, called SAM for Swift Analogue Memory, to replace the ARS used for H.E.S.S.-I. The SAM chip features 2 channels for the low and high gain outputs of a PMT, each channel having a depth of 256 analogue memory cells. The sampling frequency is adjustable from 0.7 up to 2GS/s and the read-out time for one event is decreased from 275 down to 2.3 ps. The SAM input bandwidth and dynamic range are increased up to 300 MHz and roore than 11 bits, respectively. (c) 2006 Elsevier B.V. All rights reserved.