The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography
The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography
复制标题
纳米球光刻有序凹坑图案化Si(001)衬底的制备及应用
DOI：
10.1088/0957-4484/20/9/095303
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发表时间：
2009-03-04
期刊：
影响因子：
3.5
通讯作者：
Zhong, Zhenyang
中科院分区：
文献类型：
--
作者：
Chen, Peixuan;Fan, Yongliang;Zhong, Zhenyang
提出了一种在Si（001）衬底上制作周期性可控的大尺寸凹坑图形的新方法。制造过程从在氢化Si（001）衬底上自组装单层聚苯乙烯（PS）球开始。在PS球之间热蒸发的Au图案和它们周围的Au催化的SiO2的组合的新型网状掩模自然形成。用KOH溶液选择性腐蚀Si后，可以得到周期性与PS球直径相等的二维有序凹坑，其周期范围从微米到小于100 nm。可以通过控制化学蚀刻时间来调制凹坑的形状。这种坑图案化的Si衬底有利于通过使用分子束外延沉积Ge来形成有序的Si基纳米结构，例如有序的自组装GeSi量子点。
A new scalable approach has been developed for fabricating large-scale pit patterns with controllable periodicity on Si(001) substrates. The fabrication processes start with self-assembling a monolayer of polystyrene (PS) spheres on hydrogenated Si(001) substrates. A novel net-like mask in combination of the Au pattern thermally evaporated in between the PS spheres and the Au-catalyzed SiO2 around them is naturally formed. After selective etching of Si by KOH solution, two-dimensionally ordered pits with a periodicity equal to the diameter of the PS spheres in the range from micrometers to less than 100 nm can be obtained. The shape of the pits can be modulated by controlling the chemical etching time. Such pit-patterned Si substrates facilitate the formation of ordered Si-based nanostructures, such as ordered self-assembled GeSi quantum dots, by deposition of Ge using molecular beam epitaxy.